1999. 11. 16
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTB1423
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
SWITCHING APPLICATIONS.
HAMMER DRIVER, PULSE MOTOR DRIVER
APPLICATIONS.
FEATURES
High DC Current Gain : h
FE
=1000(Min.) at V
CE
=-3V, I
C
=-3A.
High Collector Breakdown Voltage : V
CEO
=-120V (Min.)
Complementary to KTD1413.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
10.30 MAX
15.30 MAX
2.70 0.30
0.85 MAX
3.20 0.20
3.00 0.30
A
B
C
D
E
F
G
12.30 MAX
0.75 MAX
H
13.60 0.50
3.90 MAX
1.20
1.30
2.54
4.50 0.20
6.80
2.60 0.20
10
J
K
L
M
N
O
P
Q
R
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
T
H
E
R
T
V
S
K
L
U
T
S
0.5
5
25
2.60 0.15
V
U
D
A
C
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-120
V
Collector-Emitter Voltage
V
CEO
-120
V
Emitter-Base Voltage
V
EB0
-5
V
Collector Current
DC
I
C
-5
A
Pules
I
CP
-8
Base Current
I
B
-0.12
A
Collector Power Dissipation
(Tc=25 )
P
C
30
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-100V, I
E
=0
-
-
-1
mA
Emitter Cut-off Current
I
EBO
V
BE
=-5V, I
C
=0
-
-
-2
mA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-10mA, I
B
=0
-120
-
-
V
DC Current Gain
h
FE
(1)
V
CE
=-3V, I
C
=-0.5A
1000
-
-
h
FE
(2)
V
CE
=-3V, I
C
=-3A
1000
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
1
I
C
=-3A, I
B
=-12mA
-
-
-2
V
V
CE(sat)
2
I
C
=-5A, I
B
=-20mA
-
-
-4
Base-Emitter Voltage
V
BE
V
CE
=-3V, I
C
=-3A
-
-
-2.5
V
Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
-
300
pF
C
B
E
R
8k
120
R
1
2
=
=
EQUIVALENT CIRCUIT
1999. 11. 16
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KTB1423
Revision No : 1
COLLECTOR POWER DISSIPATION
0
C
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
SATURATION VOLTAGE
CE(sat)
-0.5
-3
-1
-0.3
-0.1
COLLECTOR CURRENT I (A)
C
V , V - I
h - I
C
COLLECTOR CURRENT I (A)
-0.1
-0.3
-1
-3
100
FE
DC CURRENT GAIN h
10
CAPACITANCE C , C
ob(pF)
-100
-10
-1
-0.1
COLLECTOR-BASE VOLTAGE V (V)
CB
C , C - V , V
SAFE OPERATING AREA
CE
COLLECTOR-EMITTER VOLTAGE V (V)
-1
-3
-10
-
300
-0.01
C
COLLECTOR CURRENT I (A)
R - t
w
PULSE WIDTH t (S)
10
0.1
th(t)
TRANSIENT THERMAL RESISTANCE
FE
C
-10
300
500
1k
3k
5k
10k
V =-3V
CE
CE(sat)
BE(sat),
C
V , V (V)
BE(sat)
-10
-20
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
I /I =250
C B
V
BE(sat)
CE(sat)
V
ob
ib
CB
EB
ib(pF)
EB
EMITTER-BASE VOLTAGE V (V)
-30
-3
-0.3
30
50
100
300
500
1k
f=1MHz
C
ib
ob
C
-30
-100
-0.03
-0.05
-0.1
-0.3
-0.5
-1
-3
-5
-10
-20
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE
*
I MAX.(PULSED)
C
*
C
I MAX.
(CONTINUOUS)
DC OPERATION
Tc=25 C
100
S
1mS
10mS *
*
*
V MAX.
CEO
th(t)
w
R ( C/W)
Ta=25 C NO HEAT SINK
Tc=25 C INFINITE HEAT SINK
1
2
-3
-2
10
-1
10
0
10
1
10
2
10
0.3
1
3
10
30
100
1
2
P (W)
25
50
75
100
125
150
175
5
10
15
20
25
30
35
Tc=Ta
INFINITE HEAT SINK
NO HEAT SINK
1
2
1
2
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